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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting externals, is the best for the high-speed switching usage of the equipment that promotes the automation of space-saving and mounting.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 -0.05 0.16
+0.1 -0.06
0.65 -0.15
+0.1
2.8 0.2
3
0 to 0.1
1.5
1
2
FEATURES
* Low input capacitance Ciss = 74 pF TYP. * Low on-state resistance RDS(on) = 4.5 MAX. (VGS = 10 V, ID = 0.25 A) * Small and surface mount package (SC-96)
0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 0.2
ORDERING INFORMATION
PART NUMBER 2SK4035 2SK4035-A
Note
1. Gate 2. Source 3. Drain
PACKAGE SC-96 (Mini Mold Thin Type) SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in external electrode and other parts.) Marking: XP
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Note1 Drain Current (pulse) Total Power Dissipation (TA = 25C) Note2 Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 250 30 0.5 2.0 0.2 1.25 150 -55 to +150 V V A A W W C C
Gate
Body Diode
Gate Protection Diode
Source
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t 5 sec Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17447EJ1V0DS00 (1st edition) Date Published July 2005 NS CP(K) Printed in Japan
2005
2SK4035
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD
TEST CONDITIONS VDS = 250 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 0.25 A VGS = 10 V, ID = 0.25 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 125 V, ID = 0.25 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
2.5 0.2
3.5 0.5 3.2 74 16 7 7 5 12 40
4.5
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
4.5
pF pF pF ns ns ns ns nC nC nC V ns nC
VDD = 200 V VGS = 10 V ID = 0.5 A IF = 0.5 A, VGS = 0 V IF = 0.5 A, VGS = 0 V di/dt = 100 A/s
4 0.9 2 0.84 42 57
VF(S-D) trr Qrr
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL VGS PG. RG
Wave Form
D.U.T. VGS
0 10%
IG = 2 mA VGS
90%
RL VDD
VDD
PG.
90% 90% 10% 10%
50
VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
2
Data Sheet D17447EJ1V0DS
2SK4035
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
120
PT - Total Power Dissipation - W
1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TA - Ambient Temperature - C TA - Ambient Temperature - C
100 80 60 40 20 0
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t 5 sec
FORWARD BIAS SAFE OPERATING AREA
10
ID(pulse)
ID - Drain Current - A
1
10
ID(DC)
PW =1 ms
s m
0m 10 s
R (a DS(o t V n) G S Lim = 10 ited V)
r we Po
0.1
n tio ipa ss Di Lim d ite
0.01
Single pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm
s) (5
0.001 0.01
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W
1000 Without board 100 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 10
1
Single pulse 0.1
1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000
Data Sheet D17447EJ1V0DS
3
2SK4035
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
2
VGS = 10 V Pulsed
ID - Drain Current - A
10 1 0.1 0.01 0.001 0.0001
VDS = 10 V Pulsed
ID - Drain Current - A
1
TA = -55C -25C 25C 75C 125C 150C
0 0 2 4 6 8 10
VDS - Drain to Source Voltage - V
0.00001 0 5 10 15
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
7 6 5 4 3 2 1 0 -75 -25 25 75 125 175
Tch - Channel Temperature - C
10
VDS = 10 V ID = 1 mA
1
TA = -55C -25C 25C 75C 125C 150C VDS = 10 V Pulsed
0.1
0.01 0.01
0.1
1
10
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance -
8 7 6 5 4 3 2 1 0 0.01 0.1 1 10 VGS = 10 V Pulsed
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30
VGS - Gate to Source Voltage - V
ID = 0.25 A Pulsed
ID - Drain Current - A
4
Data Sheet D17447EJ1V0DS
2SK4035
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
8
Ciss, Coss, Crss - Capacitance - pF
1000 ID = 0.25 A Pulsed
7 6 5 4 3 2 1 0 -75
100
Ciss
VGS = 10 V
10 VGS = 0 V f = 1 MHz 1 0.01 0.1 1 Crss
Coss
-25
25
75
125
175
10
100
1000
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V
100
td(on), tr, td(off), tf - Switching Time - ns
VGS = 10 V VDD = 125 V RG = 10 td(off)
200
VDD = 200 V 125 V 50 V
10 8 6
150
10
td(on) tr tf
100
VGS
4 2
50 VDS 0 ID = 0.5 A
1 0.1 1
ID - Drain Current - A
0 0 1 2 3 4 5
QG - Gate Charge - nC
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
10
trr - Reverse Recovery Time - ns IF - Diode Forward Current - A
1000 di/dt = 100 A/s VGS = 0 V 100
1
0.1 VGS = 0 V Pulsed 0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
10
1 0.1 1
IF - Diode Forward Current - A
10
Data Sheet D17447EJ1V0DS
5
2SK4035
* The information in this document is current as of July, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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